page1of7 semiconductor 8pt series rohs rohs sensitive and standard scrs, 8a symbol i t rms ( ) rms on state current full sine wave 8 i tsm non repetitive surge peak on state current full cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 45 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junction temperature range 40 + 150 to 40 + 125 to oc a s / aa w unit value 95 100 f=50hz f=60hz t=20ms t=16.7ms t =10ms p f=60hz t =125oc j t =125oc j t =125oc j t =20s p t j absolute maximum ratings parameter test conditions main features symbol value unit i t(rms) v /v drm rrm i gt 8 a v m a 0.2 15 to 600 to 1000 description (180conductionangle) 4 1 averageonstatecurrent (180conductionangle) i t av ( ) 5.1 a 1 2 3 1 2 3 2 2 2 1 2 3 to-220ab (non-lnsulated) to-251 (i-pak) to-252 (d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (8ptxxf) (8ptxxg) (8ptxxa) (8ptxxai) (g)3 1(a1) (a2) 2 www.nellsemi.com tc=110c tc=100c to251/to252/to220ab to220abinsulated to251/to252/to220ab to220abinsulated tc=110c tc=100c available either in sensitive or standard gate triggering levels, the 8a scr series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, i n r u s h c u r r e n t l i m i t i n g c i r c u i t s , c a p a c i t i v e ignition and voltage regulation circuits. available in through-hole or surface-mount they provide an optimized performance discharge packages, in a limited space.
page2of7 semiconductor 8pt series rohs rohs 8ptxxxx unit i gt v gd i h ma dv dt / v tm i drm i rrm ma i l v =12v,r =30 d l v =v ,r =3.3k d drm l i =100ma,gateopen t i =1.2i g gt v =67%v , gateopen d drm 0.2 25 150 0.85 ma vv ma v/s i =16a, tm t =380s p t =125c j t =25c j t =125c j v a standard electrical specifications ( t j = 25 ) unless otherwise specified oc, test conditions symbol v =v drm rrm 1.6 5 1 min. max. max. min. max. min. max. max. max. thermal resistance r th j c ( ) junction to case dc ( ) r th j a ( ) junction to ambient (dc) 1.3 70 c/w c/w unit value symbol parameter ipak/dpak/to220ab dpak ipak to220ab,to220abinsulated 4.6 100 s=0.5cm 2 v gt www.nellsemi.com 0.5 t 1.3 2 15 5 t =125c j max. 30 30 70 50 v to thresholdvoltage v r d t =125c j max. 46 m ma t =25c j t =125c j dynamicresistance 8ptxxxx-s unit i gt v gd ma dv dt / v tm i drm i rrm ma i h v =12v,r =140 d l v =v ,r =3.3k d drm l , =220 r gk i =10 a rg i =50ma r =1k t , gk v =67%v , r =220 d drm gk 0.1 6 0.85 a vv v/s i =16a, tm t =380s p t =125c j t =25c j t =125c j v a sensitive electrical characteristics ( t j = 25 ) unless otherwise specified oc, test conditions symbol v =v r =220 drm rrm, gk 1.6 5 1 max. max. min. max. min. max. max. max. v gt 0.8 200 t =125c j 8 5 v to thresholdvoltage v r d t =125c j max. 46 m v t =25c j t =125c j dynamicresistance v rg min. i l i =1ma r =1k g , gk max. 5 ma to220abinsulated 60 s=coppersurfaceundertab
page3of7 semiconductor rohs rohs 8pt series ordering information scheme scr series package type current voltage code i gt sensitivity a to220ab(noninsulated) = ai to220ab(insulated) = 8=8a,i t(rms) t=0.5~5ma 8 pt 06 - s 06=600v f=to251(ipak) g=to252(dpak) 08=800v www.nellsemi.com ordering information 8ptxxay 8ptxxay ordering type marking package weight base q , ty delivery mode to220ab 2.0g 50 tube 8ptxxaiy 8ptxxaiy 2.3g 50 tube 8ptxxfy 8ptxxfy to251(ipak) 0.40g 80 8ptxxgy 8ptxxgy 0.38g 80 tube to252(dpak) to220ab(insulated) tube blank=2~15ma note : xx voltage y sensitivity = , = 10=1000v product selector part number voltage x x ( ) sensitivity 600 v a 200 1000 v 8ptxxas/8ptxxals 8ptxxfs 8ptxxgs v v vv 800 v v v package to220ab dpak v v v v v v v v v 8ptxxat/8ptxxalt v v v v v v vv v vv v 8ptxxa/8ptxxal 8ptxxft 8ptxxf 8ptxxgt 8ptxxg dpak dpak ipak ipak ipak to220ab to220ab a 0.5~5 m a 2~15 m a 200 ma 0.5~5 a 2~15 m a 200 a 0.5~5 m a 2~15 m s=70~200a
semiconductor rohs rohs page4of7 0.0 0.2 0.4 0.6 0.8 1.6 8pt series 0.01 0.10 1.00 fig.5 relative variation of thermal impedance junctiontoambientversuspulseduration fig.6 relative variation of gate trigger current andholdingcurrentversusjunction temperaturefori =200 a gt -40 www.nellsemi.com fig.3 average and dc onstate current versus ambient temperature fig. relative variation of thermal impedance 4 junction to case versus pulse duration t p (s) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 1 e+0 0.1 0.2 0.5 1.0 i (av)(a) t fig. maximum average power dissipation versus 1 average on state current fig.2 average and dc onstate current versus case temperature =180 p w ( ) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 10 9 8 7 6 5 4 3 2 0 25 50 75 100 125 =180 dc t case (c) i (a) t(av) 1 0 dpakipak i (a) t(av) 360 insulated to220ab to220ab =180 dc to220ab insulated to220ab dpak ipak t amb (c) recommendedpadlayout fr4printedcircuitboard dpak recommendedpadlayout, frprintedcircuitboard t p (s) to220ab insulated to220ab 1 e+1 1 e-2 1 e-1 1 e+0 1 e+2 5e+2 t j (c) i gt l &i h l r =1k gk 1.0 1.2 1.4 1.8 2.0 -20 0 20 40 60 80 100 120 140 1 e+1 1 e+2 1 e+3 i ,i ,i [tj]/i ,i ,i [tj=25 c] gt h l gt h l k=[zth(jc)/rth(jc)] k=[zth(ja)/rth(ja)] 4
semiconductor rohs rohs page5of7 8pt series i (a) stm fig.11 surge peak onstate current versus numberofcycles fig.12 nonrepetitive surge peak onstate current andcorrespondingvaluesofl2t www.nellsemi.com 0.01 0 200 400 1600 1.00 fig.9 relative variation of dv/dt immunity versusgatecathoderesistance 0 160 180 0.0 2.5 5.0 7.5 0.0 0.2 4.0 5.0 5.5 20 0 60 20 40 40 3.5 4.5 100 140 80 120 0.4 dv/dt[r ]/dv/dt[r =220] gk gk 6.0 fig.7 relative variation of gate trigger and holdingcurrentversusjunction temperature fig.8 relative variation of holding current versusgatecathoderesistance (typicalvalues) dv/dt[c ]/dv/dt[r =220] gk gk t j (c) i gt l &i h l 5ma&15ma 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i gt =200a t =25 c j r (k) gk 1 e-2 1 e-1 1 e+0 1 e+1 r (k) gk t =125 c j v =0.67xv d drm 600 800 1000 1200 1400 1800 2000 0.10 10.00 v =0.67xv d drm t =125 c j r =220 gk c (nf) gk 20 40 60 80 120 140 200 220 100 10.0 12.5 15.0 t =10ms p onecycle nonrepetitive t initial=25 c j repetitive tc=110 c numberofcycles 0.01 10 0 40 30 60 70 90 1 100 1000 20 50 10 80 100 t p (ms) sinusoidalpulsewith widthtp<10ms tjinital=25 c i2t i tsm di/dtiimitation 0.10 1.00 10.00 10 100 1000 i [r ]/i [r =1k] h gk h gk i ,i ,i [tj]/i ,i ,i [tj=25 c] gt h l gt h l 3.0 2.5 2.0 1.5 1.0 0.5 0.0 (typicalvalues)fori =200a g fig.1 relative variation of dv/dt immunity 0 versusgatecathodecapacitance (typicalvalues)fori =200a gt i (a),i2t(a2s) tsm
semiconductor rohs rohs page6of7 8pt series www.nellsemi.com fig.13 onstate characteristics (maximum values) fig.14 thermal resistance junction to ambient versuscoppersurfaceundertab(dpak) tj=25 c tj=max tjmax v =0.85v t0 rd= m 46 v (v) tm 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4.0 0.0 0.1 0 1.0 10.0 50.0 epoxyprintedcircuitboardfr4 copperthickness=35m s(cm2) 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 i (a) tm r (ja)( c/w) th case style 4t 6.4(0.52) 6.6(0.26) 5.2(0.204) 5.4(0.212) 1.5(0.059) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) to-251 (i-pak) 2.87 (0.113) 2.62(0.103) 9.40(0.370)9.14(0.360) 10.54(0.415) . max 16.13(0.635) 15.87 (0.625) pin 4.06(0.160)3.56(0.140) 1.45(0.057)1.14(0.045) 2.67(0.105)2.41(0.095) 2.65(0.104)2.45(0.096) 5.20 (0.205)4.95 (0.195) 0.90(0.035)0.70 (0.028) 3.91(0.154)3.74(0.148) 1 3 2 4.70(0.185) 4.44 0.1754 ( ) 1.39(0.055) 1.14 (0.045) 3.68(0.145)3.43(0.135) 8.89(0.350)8.38(0.330) 29.16(1.148) 28.40 (1.118) 14.22(0.560)13.46(0.530) 0.56(0.022)0.36(0.014) 2.79(0.110) 2.54(0.100) 15.32(0.603)14.55(0.573) to-220ab (g)3 1(a1) (a2) 2
semiconductor rohs rohs 8pt series rohs 1 2 2 3 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) to-252 (d-pak) case style page7of7 (g)3 1(a1) (a2) 2 www.nellsemi.com
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